| 摘要 |
PROBLEM TO BE SOLVED: To repeatedly use a vessel for growing single crystals by drastically improving the yield of good quality single crystals almost free from crystal defects such as transposition without necessitating complicated equipment in a method for manufacturing a compound semiconductor single crystal by an LEC method. SOLUTION: The vessel 9 for growing the single crystal, satisfying following conditions (1) and (2) is used. (1) The vessel 9 is made by using isotropic carbon as a base material. (2) The vessel 9 is coated with any of pyrolytic carbon, pyrolytic graphite and glassy carbon, each of which has a coefficient of thermal expansion adjusted nearly equal to that of the isotropic carbon used as the base material. COPYRIGHT: (C)2005,JPO&NCIPI
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