| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device gate electrode forming method which can form an oxide film of a sufficient thickness even in a gate reoxidation process at a low temperature. SOLUTION: The semiconductor device gate electrode forming method includes a stage which forms a gate insulating film, a doped silicon film, a tungsten nitride film, a tungsten film, and a hard mask on a semiconductor substrate in order; a stage which patterns the hard mask; a stage which etches the tungsten film and tungsten oxide film so that the doped silicon film is exposed using the patterned hard mask film as an etching barrier; a stage which implants the predetermined ion capable of promoting oxidation of an exposed doped-silicon film portion and its side; a stage which etches the exposed doped-silicon film portion; and a stage which carries out a reoxidation for a product on the substrate through the stage to form a reoxidized film on the side of the etched doped-silicon film. COPYRIGHT: (C)2005,JPO&NCIPI
|
