发明名称 Surface processing apparatus
摘要 A surface processing apparatus which enables the electron beam energy to be reduced with a simplified construction. A wafer W as an object to be processed is placed in a processing chamber. The wafer is mounted on a mounting stage inside the processing chamber. An electron beam irradiating device is provided on the processing chamber such as to face the mounting stage and irradiates at least one electron beam toward the wafer. A self-generated electric field generator is provided between the electron beam irradiating device and the mounting stage and generates at least one self-generated electric field.
申请公布号 US2004222388(A1) 申请公布日期 2004.11.11
申请号 US20040836265 申请日期 2004.05.03
申请人 TOKYO ELECTRON LIMITED 发明人 HONDA MINORU;NONAKA RYO;MITSUOKA KAZUYUKI
分类号 G21K5/04;G03F7/20;G03F7/40;H01J37/30;H01L21/027;H01L21/31;(IPC1-7):H01J37/30 主分类号 G21K5/04
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