发明名称 HIGH SPEED BI-DIRECTIONAL SOLID STATE SWITCH
摘要 <p>A bi-directional solid state switch has two main field effect transistors (3, 8) which are connected to each other with source to source (S) and gate to gate (G). Each drain (D) is separately connected to an output terminal of the switch. An electrical impedance (5) is connected between the gates (G) and the sources (S). A driver signal (V) is connected between the gates (G) and one drain (D). This circuit topology is counter­intuitive, but provides advantages which can include eliminating the need for electrical isolation, being capable of turning on or off at any time, at or between zero crossings, having a high speed of response, simplicity, reliability, cost-effectiveness, and energy-efficiency.</p>
申请公布号 WO2004098060(A1) 申请公布日期 2004.11.11
申请号 WO2004GB01793 申请日期 2004.04.27
申请人 KINECTRICS INC;AEA TECHNOLOGY PLC 发明人 DE BUDA, ERIC, GEORGE
分类号 H03K17/687;(IPC1-7):H03K17/687 主分类号 H03K17/687
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