| 发明名称 |
COMPOUND SEMICONDUCTOR WAFER AND ITS MANUFACTURING METHOD |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a compound semiconductor wafer and its manufacturing method capable of stably manufacturing an InGaAs light receiving layer of excellent crystallinity. <P>SOLUTION: The compound semiconductor wafer is formed with an In<SB>x</SB>As<SB>1-x</SB>P graded buffer layer 12 composed of a plurality of layers held between an InP substrate 11 and an InGaAs layer 14, and positioned on the InP substrate and an In<SB>y</SB>As<SB>1-y</SB>P buffer layer 13 positioned on the graded buffer layer. The maximum value of PL emission intensity at boundaries of the respective layers of the graded buffer layer and the buffer layer is less than 3/10 of the maximum value of the PL emission intensity of the buffer layer at all the boundaries. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
| 申请公布号 |
JP2004319765(A) |
申请公布日期 |
2004.11.11 |
| 申请号 |
JP20030111748 |
申请日期 |
2003.04.16 |
| 申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
IWASAKI TAKASHI;SAWADA SHIGERU;KIMURA HIROYA;OKI KENJI |
| 分类号 |
H01L21/205;H01L21/00;H01L21/20;H01L29/732;H01L31/0304;H01L31/0328;H01L31/0336;H01L31/072;H01L31/10;H01L31/103;H01L31/109;H01L31/18;(IPC1-7):H01L31/10 |
主分类号 |
H01L21/205 |
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