| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide polishing solution for metal which attains formation of embedded patterns of high reliability for a metal film, by suppressing polishing speed of a barrier layer while maintaining polishing speed of a metal film in the metal wiring portion of a semiconductor device, and thus by preventing occurrences of dishing at a wide wiring portion and deterioration of flatness caused by erosion of the metal wiring portion and an interlayer insulating film in a high density wiring portion. <P>SOLUTION: The polishing solution comprises oxidant for metal, solubilizer for metal oxide, anticorrosives for metal, abrasive grain, absorbent for abrasive grain, and water. Preferably, the absorbent for abrasive grain may be nonionic polymeric materials that adhere to silica particles. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
