| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a YbTbBiFe-based magnetic garnet film that is extremely reduced in banded defect, and to provide a method of forming the garnet film by which the garnet film can be formed at a high yield. <P>SOLUTION: In the method of forming the YbTbBiFe-based magnetic garnet film, the garnet film can be grown on a garnet substrate by a liquid phase epitaxial growth method by using a solution containing PbO, Bi<SB>2</SB>O<SB>3</SB>, B<SB>2</SB>O<SB>3</SB>, Yb<SB>2</SB>O<SB>3</SB>, Tb<SB>2</SB>O<SB>3</SB>, and Fe<SB>2</SB>O<SB>3</SB>. The lattice constant of a garnet substrate falls within a range of 1.2490-1.2515 nm, and the molar ratio in the solution meets following four requirements of 17.5≤[Fe<SB>2</SB>O<SB>3</SB>]/([Yb<SB>2</SB>O<SB>3</SB>]+[Tb<SB>2</SB>O<SB>3</SB>])≤25, 0.13≤[Fe<SB>2</SB>O<SB>3</SB>]+[Yb<SB>2</SB>O<SB>3</SB>]+[Tb<SB>2</SB>O<SB>3</SB>]≤0.145, 0.072≤[Yb<SB>2</SB>O<SB>3</SB>]/[Tb<SB>2</SB>O<SB>3</SB>]≤0.076, and 40≤[Bi<SB>2</SB>O<SB>3</SB>]/([Yb<SB>2</SB>O<SB>3</SB>]+ [Tb<SB>2</SB>O<SB>3</SB>])≤50. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
