| 摘要 |
The inventive light-emitting diode comprises a substrate (1), an epitaxial heterostructure based on solid solutions of group III metal nitrides AlxInyGa 1-(x+y)N, (0</=x</=1, 0</=y</=1) provided with an n-p junction and formed by an epitaxial layer sequence (2 and 4) of n and p-type conductivity and metal contacts which are arranged on the side of the epitaxial layers, at least one metal contact being arranged on the external surface of said epitaxial layers. The substrate (1) is made of a monocrystal of a nitride of a metal of the third group A<III>N. A mesa-structure is formed in the epitaxial layers on the external side thereof. A slot (7) whose depth is greater that the p-n junction depth is embodied in said mesa-structure and divides it into two areas. One of the metal contacts (5) is arranged on the external surface of one area (A) of said mesa-structure, the other metal contact (6) being arranged on the external surface of the other area (B) and running down the lateral wall of the slot (7) to the bottom thereof. |
| 申请人 |
ZAKRYTOE AKTSIONERNOE OBSCHESTVO "INNOVATSIONNAYA;VASILIEVA, ELENA DMITRIEVNA;ZAKGEIM, ALEKSANDR LVOVICH;ZAKGEIM, DMITRY ALEKSANDROVICH;GUREVICH, SERGEI ALEKSANDROVICH;ITKINSON, GRIGORY VLADIMIROVICH;ZHMAKIN, ALEKSANDR IGOREVICH |
发明人 |
VASILIEVA, ELENA DMITRIEVNA;ZAKGEIM, ALEKSANDR LVOVICH;ZAKGEIM, DMITRY ALEKSANDROVICH;GUREVICH, SERGEI ALEKSANDROVICH;ITKINSON, GRIGORY VLADIMIROVICH;ZHMAKIN, ALEKSANDR IGOREVICH |
