POSITIVE PHOTORESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

摘要

A positive photoresist composition for EB which comprises a resin component (A) which has an alkali-solubility increasing by an action of an acid, an acid generating component (B) which generates an acid by the exposure to a light and an organic solvent (C), wherein the component (A) comprises a copolymer containing (a1) a first constitutional unit derived from hydroxystyrene and (a2) a second constitutional unit derived from a (meth)acrylate having an alcoholic hydroxyl group, and a part of the hydroxyl group in the above constitutional unit (a1) and the alcoholic hydroxyl group in the above constitutional unit (a2) is protected by a dissolution inhibiting group which is dissociated by an acid; and a method for forming a resist pattern which uses said positive photoresist composition. The photoresist composition has high resistance to etching and can achieve high resolution, and allows the formation of a fine pattern using an exposure step by an electron beam.