METHOD OF FORMING FERROELECTRIC CAPACITOR USING SrRuO3 LAYER AS OXYGEN DIFFUSION BARRIER FOR MINIMIZING LEAKAGE CURRENT OF LOWER ELECTRODE,申请号KR19970075086-传众专利搜索

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发明名称	METHOD OF FORMING FERROELECTRIC CAPACITOR USING SrRuO3 LAYER AS OXYGEN DIFFUSION BARRIER FOR MINIMIZING LEAKAGE CURRENT OF LOWER ELECTRODE
摘要
申请公布号	KR100458084(B1)	申请公布日期	2004.11.11
申请号	KR19970075086	申请日期	1997.12.27
申请人	HYNIX SEMICONDUCTOR INC.	发明人	YOO, YONG SIK
分类号	H01L27/108;H01L21/02;(IPC1-7):H01L27/108	主分类号	H01L27/108
代理机构		代理人
主权项
地址

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