MANUFACTURING METHOD OF PHOTOELECTRIC TRANSFER DEVICE, PHOTOELECTRIC TRANSFER ELEMENT, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND FORMING METHOD OF SEMICONDUCTOR PARTICULATE LAYER AND LAMINATE STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a photoelectric transfer element in which a semiconductor electrode made of semiconductor particulates can be formed excellently on a metal oxide membrane while preventing elution of the metal oxide membrane, and at a low temperature process, and a photoelectric transfer element.

SOLUTION: In the photoelectric transfer element having a semiconductor electrode made of semiconductor particulates and a metal membrane to be a counter electrode, polyethylenedioxothiophene (PEDOT)/ polystyrene sulfonic acid (PSS) membrane 13 are formed by a spin coat on a transparent electrode 12 made of a metal oxide such as ITO, and then a semiconductor particulate layer 14 made of titanium oxide particulate or the like is formed by spin coating the semiconductor particulate dispersion solution.

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