HALFTONE PHASE SHIFT MASK BLANK, ITS MANUFACTURING METHOD AND HALFTONE PHASE SHIFT MASK

摘要

PROBLEM TO BE SOLVED: To provide a halftone phase shift mask blank and a phase shift mask which can control not only the optical conditions to be satisfied as a phase shift mask but the reflectance for exposure light as a phase shift mask and the transmittance at an inspection wavelength, and moreover, which has dry etching adaptability.

SOLUTION: The halftone phase shift mask blank 10 is prepared by depositing a compound thin film 21 composed of a zirconium silicide nitride carbide film or a zirconium silicide oxide nitride carbide film on a transparent substrate 11. The compound thin film 21 of the halftone phase shift mask blank 10 is patterned to form a transparent region 31 and a semitransparent region 21a for exposure light on the transparent substrate 11 to obtain the halftone phase shift mask 100.

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