| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus for both range finding and imaging purposes the sensitivity and the saturated electric charge amount of which are improved by decreasing the capacitance of a floating diffusion part and increasing the area of a photoelectric conversion part. SOLUTION: The solid-state imaging apparatus including: a photoelectric conversion element divided into first and second photoelectric conversion parts 13, 14; first and second transfer MOS transistors 16, 17 respectively provided to the first and second photoelectric conversion parts; the floating diffusion part 15 receiving signal electric charges; and pixels including amplifier parts connected to the floating diffusion part which are two-dimensionally arranged, is structured such that the first photoelectric conversion part is connected to the floating diffusion part via the first and second transfer MOS transistors and the second photoelectric conversion part is connected to the floating diffusion part via the second transfer MOS transistor, and the first and second transfer MOS transistors are configured with a 2-layer poly gate structure. COPYRIGHT: (C)2005,JPO&NCIPI
|
