发明名称 |
EQUIPMENT AND METHOD FOR SUBSTRATE PROCESSING AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To reduce dopant stuck on a surface of a wafer in a process wherein cleaning of atmosphere in the treatment space of a wafer is necessary. SOLUTION: Substrate processing equipment is provided wherein treatment is performed to a wafer W in the state that plates 16 for dopant trapping coated with gas for treating the wafer W are arranged almost in parallel to the wafer W at the periphery of the wafer W, in substrate processing equipment wherein the wafer W is treated while making gas for treatment flow almost in parallel to the wafer W to the surface of the wafer W in a treatment room 1. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2004319693(A) |
申请公布日期 |
2004.11.11 |
申请号 |
JP20030110440 |
申请日期 |
2003.04.15 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
OGAWA ARIHITO;TAKAZAWA HIROMASA;KARASAWA HAJIME |
分类号 |
H01L21/205;H01L21/027;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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地址 |
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