发明名称 EQUIPMENT AND METHOD FOR SUBSTRATE PROCESSING AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce dopant stuck on a surface of a wafer in a process wherein cleaning of atmosphere in the treatment space of a wafer is necessary. SOLUTION: Substrate processing equipment is provided wherein treatment is performed to a wafer W in the state that plates 16 for dopant trapping coated with gas for treating the wafer W are arranged almost in parallel to the wafer W at the periphery of the wafer W, in substrate processing equipment wherein the wafer W is treated while making gas for treatment flow almost in parallel to the wafer W to the surface of the wafer W in a treatment room 1. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004319693(A) 申请公布日期 2004.11.11
申请号 JP20030110440 申请日期 2003.04.15
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 OGAWA ARIHITO;TAKAZAWA HIROMASA;KARASAWA HAJIME
分类号 H01L21/205;H01L21/027;(IPC1-7):H01L21/205 主分类号 H01L21/205
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