发明名称 Apparatus and method for plasma enhanced monolayer processing
摘要 An apparatus and method for plasma enhanced monolayer (PEM) processing, wherein excited species from a non-condensable gas plasma are delivered to a substrate surface during the reaction of a chemical precursor with a previously chemisorbed monolayer on the substrate surface; the excited species lower the activation energy of the monolayer formation reaction and also modulate the film properties. In preferred embodiments a process reactor has linear injectors arranged diametrically above a substrate and reactive gases are sequentially injected onto the substrate surface while it is being rotated. The reactor can be operated in pulse precursor and pulsed plasma, constant precursor and constant plasma modes, or a combination thereof.
申请公布号 US2004224504(A1) 申请公布日期 2004.11.11
申请号 US20040865111 申请日期 2004.06.09
申请人 GADGIL PRASAD N. 发明人 GADGIL PRASAD N.
分类号 C23C16/00;H01L21/44;(IPC1-7):H01L21/44 主分类号 C23C16/00
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