| 摘要 |
Systems and methods for generating a voltage reference are provided. One embodiment, among others, provides a reference-voltage generating circuit that incorporates a biasing diode together with a first field effect transistor (FET) connected in series with the biasing diode. A first reference-voltage is generated at a connection point between the biasing diode and the first FET, the first FET being selectively biased to produce a source-drain current that is substantially the same as a current passing through the biasing diode. The current passing through the biasing diode configures the biasing diode to operate as a linear resistor having a voltage drop that varies at a desired rate when the diode is subjected to a change in temperature.
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