| 摘要 |
Method of using a supercritical fluid to clean a substrate having a fine structure in which a cleaning process is carried out by immersing the substrate in supercritical carbon dioxide for a predetermined time, and foreign matter adhering to the substrate is removed. After this, a rinsing process is performed on the substrate by stopping the supplying of a tertiary amine compound and supplying only the supercritical carbon dioxide so that the supercritical carbon dioxide to which the tertiary amine compound has been added is replaced with pure supercritical carbon dioxide. Next, the supplying of the carbon dioxide is stopped and the supercritical carbon dioxide inside the processing chamber is discharged so that the temperature and pressure inside the processing chamber fall, resulting in the carbon dioxide inside the processing chamber being gasified and the substrate being supercritically dried.
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