发明名称 |
Semiconductor memory device and manufacturing process for the same |
摘要 |
In a semiconductor memory device having a capacitor layer comprising a dielectric film or a ferroelectric film, as an interlayer insulation film formed between the capacitor and a wiring layer formed at the upper part thereof or an insulation film which covers the wiring layer, a multilayered film is used which consists of a first insulation film and a second insulation film laid upon the other; the former being a lower layer and being formed of an organic film, and the latter being an upper layer and being formed of a hard-mask material. This makes it possible to prevent thin films comprised of a dielectric material or a ferroelectric material from any deterioration caused by the hydrogen and water contained in the interlayer insulation film and passivation film of the semiconductor memory device and also by the stress of these films.
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申请公布号 |
US2004222438(A1) |
申请公布日期 |
2004.11.11 |
申请号 |
US20040861500 |
申请日期 |
2004.06.07 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
OTANI MIHARU;TANAKA JUN;SUENAGA KAZUFUMI;OGATA KIYOSHI |
分类号 |
H01L21/768;H01L21/02;H01L21/312;H01L21/316;H01L21/8246;H01L23/522;H01L27/105;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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