发明名称 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
摘要 A nonvolatile semiconductor storage device including memory cells for storing data; first reference cells; a check circuit for checking the threshold value of the first reference cells; and an erasing circuit for erasing the data of the memory cells in response to an event that the check circuit determines that the threshold value of the first reference cells is less than or approximately equal to a predetermined fixed value.
申请公布号 WO2004077446(A8) 申请公布日期 2004.11.11
申请号 WO2003JP02271 申请日期 2003.02.27
申请人 FUJITSU LIMITED;SUZUKI, ATSUHIRO 发明人 SUZUKI, ATSUHIRO
分类号 G06F12/14;G11C16/06;G11C16/16;G11C16/22;G11C16/34;H01L27/10;H01L29/78;H03K17/284;(IPC1-7):G11C16/06 主分类号 G06F12/14
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