发明名称 SUBSTRATE TREATMENT EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To prevent damages to part of the rear face of a wafer which is supported by a boat to prevent the occurrence of a crystal defect called a slip through the damages when heat treatment is carried out using a vertical type heat treatment apparatus. SOLUTION: In Figure, the reference numeral 1 represents a vertical type reaction furnace, the numeral 2 represents a heater having a plurality of concave and convex portions, the numeral 3 represents gas blowout ports installed at the upper end of the heater, the numeral 4 represents a gas supply channel for sending treatment gas to the gas blowout ports 3, the numeral 5 represents a gas exhaust channel for exhausting the gas out of the reaction furnace 1, the numeral 6 represents the boat, the numeral 7 represents the wafer, the numeral 8 represents a sealing cap, and the numeral 9 represents a heater fixing section. The boat 6 is placed on the sealing cap 8 and is taken in and out of the reaction furnace 1 through an opening at the bottom of the vertical type reaction furnace 1. The heater 2 has the plurality of concave and convex portions, and is so arranged so that the wafers 7 can be inserted into the concave portions. By this structure, there is no temperature variation in the plane of the wafer, preventing the occurrence of the slip due to the temperature variation in the plane of the wafer. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004319695(A) 申请公布日期 2004.11.11
申请号 JP20030110442 申请日期 2003.04.15
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 SHIMADA TOSHIYA
分类号 H01L21/683;H01L21/31;H01L21/68;(IPC1-7):H01L21/68 主分类号 H01L21/683
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