| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric storage device in which word lines and bit lines are hierarchized and the influence of disturbance noise is reduced. SOLUTION: This ferroelectric storage device comprises a plurality of first sub wordline selection switches 60 and 61 which are provided between each of a plurality of main wordlines MWL and one end of each of a plurality of sub wordlines SWL subordinate to each of the main wordlines MWL and are respectively independently driven, a plurality of first sub bitline selection switches 80 and 81 which are provided between each of a plurality of main bitlines MBL and one end of each of a plurality of sub bitlines SBL subordinate to each of the main bitlines MBL and are respectively independently driven, a plurality of second sub wordline selection switches 62 and 63 which are provided between the other end of each of the plurality of sub wordlines SWL provided in a plurality of sector areas 12 and non-selected word potential supply lines 70 and 72 and are respectively independently driven, and a plurality of second sub bitline selection switches 82 and 83 which are provided between the other end of each of the plurality of sub bitlines SWL provided in each of the plurality of sector areas 12 and non-selected bit potential supply lines 90 and 92 and are respectively independently driven. COPYRIGHT: (C)2005,JPO&NCIPI
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