发明名称 SEFT-ALIGNED DUAL-BIT NVM CELL AND METHOD FOR FORMING THE SAME
摘要 A self-aligned dual-bit NVM cell. Each NVM cell has two isolated chargeable areas storing one bit respectively. That is, the two chargeable areas are physically separated. A control gate and a passivation layer are disposed over and between the two isolated chargeable areas. Moreover, the two isolated chargeable areas are formed by a self-alignment process.
申请公布号 US2004222455(A1) 申请公布日期 2004.11.11
申请号 US20030429710 申请日期 2003.05.06
申请人 HUSEH CHENG-CHEN CALVIN 发明人 HUSEH CHENG-CHEN CALVIN
分类号 H01L21/8234;H01L21/8239;H01L21/8247;H01L27/105;H01L27/115;H01L29/76;H01L29/788;H01L29/792;(IPC1-7):H01L29/76 主分类号 H01L21/8234
代理机构 代理人
主权项
地址