METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor wafer which can suppress generation of a damage of the outermost periphery of the wafer caused by the contact between the outermost periphery of the wafer and the peripheral wall of a wafer holding hole of a carrier plate.

SOLUTION: In first chamfering, the outermost peripheral side of a silicon wafer W after sliced is made to be a flat surface including a wafer thickness direction. Thus, in lapping, the contact between the outermost periphery of the wafer W after subjected to the first chamfering and the peripheral wall of a wafer holding hole 13a of each carrier plate 13 can be made to be a surface contact.

COPYRIGHT: (C)2005,JPO&NCIPI