MANUFACTURING METHOD OF FIELD EMISSION ELECTRON SOURCE

摘要

PROBLEM TO BE SOLVED: To provide a field emission electron source easy to manufacture with high reliability capable of reducing the cost.

SOLUTION: A structure shown in Figure (d) is obtained by carrying out a process of forming a concave part 6c on a main face side of an n-type silicon board as a conductive board. Next, a structure shown in figure (e) is obtained by carrying out a deposition process of depositing silicon microcrystal as fine particles of a nanometer size by a PCVD method. 5a in the figure (e) illustrates a microcrystal layer consisting of a number of silicon microcrystals enriched in the concave part 6c. After the deposition process, a plurality of drift parts 6a are formed by carrying out an insulation film forming process of forming a silicon oxide film as an insulation film on the surface of the silicon microcrystals constituting the microcrystal layer, and then, a structure shown in figure (f) is obtained by forming a surface electrode 7 on a strong field drift part 6 consisting of the drift part 6a and a heat radiation part 6b.

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