发明名称 |
BICMOS TECHNOLOGY ON SOI SUBSTRATES |
摘要 |
A method and a BICMOS structure are provided. The BiCMOS structure includes an SOI substrate having a bottom Si-containing layer, a buried insulating layer located atop the bottom Si-containing layer, a top Si-containing layer atop the buried insulating layer and a sub-collector which is located in an upper surface layer of the bottom Si-containing layer. The sub-collector is in contact with a bottom surface layer of the buried insulating layer. The structure also includes an extrinsic base heterojunction bipolar transistor located in an opening provided in a bipolar device area of the SOI substrate in which a base region of the bipolar transistor is located directly atop the sub-collector.
|
申请公布号 |
US2004222436(A1) |
申请公布日期 |
2004.11.11 |
申请号 |
US20030249819 |
申请日期 |
2003.05.09 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
JOSEPH ALVIN J.;LIU QIZHI |
分类号 |
H01L21/331;H01L27/01;H01L27/06;H01L27/12;H01L29/00;H01L31/0328;(IPC1-7):H01L31/032 |
主分类号 |
H01L21/331 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|