发明名称 OUTPUT CIRCUIT FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an output circuit for a semiconductor device capable of obtaining a desired circuit characteristic and taking a static electricity discharge countermeasure. SOLUTION: An output buffer circuit 4 in the output circuit of the semiconductor device includes a P channel MOS transistor 27.1 and a resistive element 29.1 connected in series between a line of a power supply level VDD and an output node N12. The current drive capability of the output buffer circuit 4 is adjusted by making the P channel MOS transistor 27.1 nonconductive when a fuse 39.1 is not blown and by connecting gates of the P channel MOS transistor 27.1 and a MOS transistor 21 when the fuse 39.1 is blown. Thus, a desired circuit characteristic can be obtained. Further, provision of the resistive element 29.1 between the drain of P channel MOS transistor 27.1 and the output node N12 can take the static electricity discharge countermeasure. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004320231(A) 申请公布日期 2004.11.11
申请号 JP20030109237 申请日期 2003.04.14
申请人 RENESAS TECHNOLOGY CORP 发明人 URAGAMI ARINORI;NAKAJIMA MICHIO
分类号 H01L27/04;G11C7/10;H01L21/82;H01L21/822;H03K17/12;H03K17/16;H03K17/687;H03K19/003;H03K19/0175;H03K19/0948;(IPC1-7):H03K17/12;H03K19/017;H03K19/094 主分类号 H01L27/04
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