发明名称 |
Methods and circuits for programming of a semiconductor memory cell and memory array using a breakdown phenomenon in an ultra-thin dielectric |
摘要 |
A method of programming a memory cell is disclosed. The memory cell comprises a select transistor and a data storage element. The method comprises allowing current to flow through the data storage element until a predetermined current or voltage is detected. If the current or voltage exceeds a threshold, then the programming is deemed complete.
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申请公布号 |
US2004223370(A1) |
申请公布日期 |
2004.11.11 |
申请号 |
US20040859934 |
申请日期 |
2004.06.02 |
申请人 |
WANG JIANGUO;FONG DAVID;PENG JACK ZEZHONG;YE FEI;FLIESLER MICHAEL DAVID |
发明人 |
WANG JIANGUO;FONG DAVID;PENG JACK ZEZHONG;YE FEI;FLIESLER MICHAEL DAVID |
分类号 |
G11C11/56;G11C29/50;(IPC1-7):G11C11/34;G11C7/02 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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地址 |
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