| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a stencil mask in which the displacement of a pattern due to a change in warp of a substrate is suppressed during a manufacturing process of a stencil mask, the effects of thermal distortion is small, and transfer accuracy is high during exposure using a charged beam. <P>SOLUTION: In the stencil mask, two substrate are laminated via an intermediate layer, a through-hole for a charged beam is formed in one substrate, and an opening is formed at a place corresponding to the through-hole in the other substrate. A film for preventing substrate warp is formed on a surface at a side opposite to an intermediate layer side of the substrate in which the opening is formed, and the film is provided such that the product of internal stress and the thickness of the film is equal to the product of internal stress and the thickness of the intermediate layer, and the film for preventing the substrate warp is formed by the same thin-film formation method as in the intermediate layer. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
