SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device whose source region and base region are formed by ion injection by using the same mask and a manufacturing method therefor by improving the tradeoff relation between a channel resistance and a JFET resistance which is a problem arising when an element is made thin. SOLUTION: A longitudinal MOSFET which uses SiC has its source region 4 and base region 5 formed by ion injection by using the same mask 9 in a tapered shape and then the base region 5 is formed in the tapered shape. When a material having the same range of ion injection with SiC is used for the mask 9 in the tapered shape, the taper angle of the mask 9 is 30 to 60°and when SiO2is used, the taper angle is 20 to 45°. COPYRIGHT: (C)2005,JPO&NCIPI