| 摘要 |
PROBLEM TO BE SOLVED: To provide a battery-equipped integrated circuit device which can efficiently prevent property deterioration and malfunction of the semiconductor device, without using a large amount of N-type impurities. SOLUTION: This battery-equipped integrated circuit device has (1) a semiconductor substrate, (2) a solid-state battery mounted on the semiconductor substrate, (3) an integrated circuit mounted on the semiconductor substrate, (4) a first diffusion layer containing N-type impurities formed between the region, in which the solid-state battery is mounted and the region in which the integrated circuit is mounted, and (5) a second diffusion layer including N-type impurities which is formed under the region in which the solid-state battery is mounted and overlaps the first diffusion layer. The solid-state battery consists of a positive electrode, a negative electrode, and a solid electrolyte positioned between the positive and negative electrodes. The concentration of N-type impurities in the first diffusion layer is higher than that in the second diffusion layer. COPYRIGHT: (C)2005,JPO&NCIPI
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