| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a plurality of semiconductor circuits, in which power supply potential and ground potential can be reinforced, regardless of the cross-sectional structure of the semiconductor device. SOLUTION: A plurality of power supply potential regions 13a and ground potential regions 13b which are alternately provided with interlayer insulating layers 13c interposed in plan view are provided on a potential wiring layer 13. A contact plug 15a penetrating a second insulating layer 14 is provided to electrically connecting one source/drain (S/D) region 16a of a selected field effect transistor to a selected power supply potential region 13a, and a contact plug 15b penetrating the second insulating layer 14 is provided to electrically connect the other source/drain (S/D) region 16b of the selected field effect transistor to a selected ground potential region 13b. COPYRIGHT: (C)2005,JPO&NCIPI
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