| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device providing a memory cell capacitor excellent in reliability in such a way that the deterioration of characteristics caused by hydrogen or a reducing atmosphere is suppressed/prevented. SOLUTION: The memory cell capacitor C comprises a lower electrode 7 formed on a first hydrogen barrier film 8, a capacitance insulating film 9 composed of ferroelectric material formed on the lower electrode 7, and an upper electrode 10 formed on the capacitance insulating film 9. An interlayer film 15 is formed in such a manner that it covers the memory cell capacitor C on the first hydrogen barrier film 8 and the memory cell capacitor C. The interlayer film 15 reduces a step of the edge E of the memory cell capacitor C. A second hydrogen barrier film 11 is formed on the interlayer film 15, and further, a second insulating film 12 is formed on the second hydrogen barrier film 11. COPYRIGHT: (C)2005,JPO&NCIPI
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