| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor suitable for preventing movable ion from entering a channel. SOLUTION: A layer film, which is silicon nitride, is provided between a substrate and the insulated gate-type semiconductor device, and the gate insulated film of the insulated gate-type field-effect semiconductor device is at least so structured that it contains a layer of silicon nitride. This silicon nitride coat is effective in blocking movable ion such as sodium or the like, thus being able to prevent movable ion from entering into the channel area from the gate electrode and others, i.e., prevent movable ion's invasion. COPYRIGHT: (C)2005,JPO&NCIPI
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