FERROELECTRIC FILM, ITS MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a ferroelectric film having a Bi-layered perovskite structure with good properties by means of crystallization at low temperature. SOLUTION: This method for manufacturing a ferroelectric film includes a process of forming a ferroelectric film by crystallizing an ingredient solution including a primary solution and a secondary solution which is different in composition from the primary solution. The primary solution is for making a ferroelectric material having a Bi-layered perovskite structure and the secondary solution is for making ABO3-based oxide whose A site is lead. COPYRIGHT: (C)2005,JPO&NCIPI