SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To improve operational stability of a power MISFET with a sensor. SOLUTION: A main MISFETQMAINand a sub MISFETQSUBare disposed while separating a well 3A of the main MISFETQMAINand a well 3B of the sub MISFETQSUBjust at a predetermined interval so as to set voltage resistance similar to the drain breakdown voltage of the main MISFETQMAINand the sub MISFETQSUBtherebetween, so that the drain breakdown voltage of the sub MISFETQSUBis matched with the drain breakdown voltage of the main MISFETQMAINwhile preventing a malfunction such that the sub MISFETQSUBis turned on approximately simultaneously with the main MISFETQMAIN. COPYRIGHT: (C)2005,JPO&NCIPI