| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device provided with floating electrodes having good charge holding characteristics. SOLUTION: In the nonvolatile semiconductor storage device, an insulating slit 18A is formed between the floating electrodes 18 of two nonvolatile storage elements adjoining each other with an element isolation region 17 in between, and a slit insulating layer 19-2 is embedded in the slit 18A. In addition, a control electrode 20 is formed astride the floating electrodes 18 of the adjoining nonvolatile storage elements through the slit insulating layer 19-2 and an inter-electrode insulating film 19-1. COPYRIGHT: (C)2005,JPO&NCIPI
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