发明名称 |
Whole new mask repair method |
摘要 |
A method for repairing a defective photomask having contained therein a minimum of one defect first provides forming a masking layer upon the defective photomask such as to leave exposed the minimum of one defect. Within the invention the minimum of one defect within the defective photomask may be repaired while employing the masking layer as a defect repair masking layer, to thus form a repaired photomask from the defective photomask. The method provides for efficient repairing of the defective photomask, absent transparent substrate damage.
|
申请公布号 |
US2004224237(A1) |
申请公布日期 |
2004.11.11 |
申请号 |
US20030431858 |
申请日期 |
2003.05.08 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN TZY-YING;YOO CHUE-SAN;HU CHIN-WANG;HSIEH MING-CHIH;HO MING-FENG;KUNG CHENG-HUNG |
分类号 |
G01B7/00;G01B15/00;G03F1/00;G03F7/20;G03F9/00;G06F15/00;G21K5/10;H01J37/08;H01L21/00;(IPC1-7):G01B7/00 |
主分类号 |
G01B7/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|