Polishing a semiconductor wafer having a layer of conducting material comprises rotating the wafer against a polishing abrasive cushion, and applying a solution containing an etchant onto the wafer and the cushion

摘要

Polishing a semiconductor wafer having a layer of conducting material comprises rotating the wafer against a polishing abrasive cushion, and applying a solution containing an etchant of the conducting material onto the wafer and the cushion. An independent claim is also included for a process for the production of a semiconductor component structure on a wafer comprising depositing a dielectric layer on a substrate, structuring and etching the dielectric layer to form an opening, depositing a liner layer on the dielectric layer and along the base and side walls of the opening, depositing a conducting layer on the liner layer to completely fill the opening, and polishing the conducting layer using the above polishing process.