发明名称 Semiconductor memory device
摘要 A semiconductor memory device includes: a device substrate having a semiconductor layer separated by a dielectric layer from a base substrate; a memory cell array having a plurality of memory cells formed and arranged on the semiconductor layer of the device substrate, each the memory cell having a MOS transistor structure with a body in an electrically floating state to store data based on a majority carrier accumulation state of the body; and a sense amplifier circuit configured to read out data of a selected memory cell in the memory cell array to store the read data in a data latch, then transfer the read data to an output circuit and write back the read data into the selected memory cell. <IMAGE>
申请公布号 EP1475805(A2) 申请公布日期 2004.11.10
申请号 EP20030015566 申请日期 2003.07.11
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 IKEHASHI, TAMIO;OHSAWA, TAKASHI;FUJITA, KATSUYUKI
分类号 H01L27/108;G11C7/06;G11C11/401;G11C11/404;G11C11/406;G11C11/4091;G11C16/00;H01L21/8242;(IPC1-7):G11C7/06;G11C11/409;G11C7/14 主分类号 H01L27/108
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