发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device includes: a device substrate having a semiconductor layer separated by a dielectric layer from a base substrate; a memory cell array having a plurality of memory cells formed and arranged on the semiconductor layer of the device substrate, each the memory cell having a MOS transistor structure with a body in an electrically floating state to store data based on a majority carrier accumulation state of the body; and a sense amplifier circuit configured to read out data of a selected memory cell in the memory cell array to store the read data in a data latch, then transfer the read data to an output circuit and write back the read data into the selected memory cell. <IMAGE>
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申请公布号 |
EP1475805(A2) |
申请公布日期 |
2004.11.10 |
申请号 |
EP20030015566 |
申请日期 |
2003.07.11 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
IKEHASHI, TAMIO;OHSAWA, TAKASHI;FUJITA, KATSUYUKI |
分类号 |
H01L27/108;G11C7/06;G11C11/401;G11C11/404;G11C11/406;G11C11/4091;G11C16/00;H01L21/8242;(IPC1-7):G11C7/06;G11C11/409;G11C7/14 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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