METHOD FOR IMPROVED ALIGNMENT TOLERANCE IN A BIPOLAR TRANSISTOR AND RELATED STRUCTURE,申请号KR20047014726-传众专利搜索

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发明名称	METHOD FOR IMPROVED ALIGNMENT TOLERANCE IN A BIPOLAR TRANSISTOR AND RELATED STRUCTURE
摘要
申请公布号	KR20040094820(A)	申请公布日期	2004.11.10
申请号	KR20047014726	申请日期	2003.05.08
申请人		发明人
分类号	H01L29/737;H01L21/331	主分类号	H01L29/737
代理机构		代理人
主权项
地址

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