发明名称 |
METHOD AND APPARATUS FOR ELECTROPLATING METAL WIRING LAYER OF SEMICONDUCTOR DEVICE TO POLISH UNIFORMLY COPPER LAYER |
摘要 |
PURPOSE: A method and an apparatus for electroplating a metal wiring layer of a semiconductor device are provided to polish uniformly a copper layer as the metal wiring layer by using plural cathodes. CONSTITUTION: A wafer(110) is dipped into an electrolyte(120) in order to perform an electroplating process. A positive polarity voltage is applied to the wafer. A negative polarity voltage is applied to an electrode which is arranged within the electrolyte. The electrode is formed with a main electrode and a plurality of sub-electrodes. The sub-electrodes are arranged on an upper part of the main electrode. The negative polarity voltage is applied sequentially to the main electrode and the sub-electrodes.
|
申请公布号 |
KR20040094560(A) |
申请公布日期 |
2004.11.10 |
申请号 |
KR20030028422 |
申请日期 |
2003.05.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, SEON JEONG;PARK, GI CHEOL |
分类号 |
H01L21/304;B23H3/00;B23H5/08;B23H9/00;C25F3/02;C25F7/00;H01L21/321;H01L21/768;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|