发明名称 METHOD AND APPARATUS FOR ELECTROPLATING METAL WIRING LAYER OF SEMICONDUCTOR DEVICE TO POLISH UNIFORMLY COPPER LAYER
摘要 PURPOSE: A method and an apparatus for electroplating a metal wiring layer of a semiconductor device are provided to polish uniformly a copper layer as the metal wiring layer by using plural cathodes. CONSTITUTION: A wafer(110) is dipped into an electrolyte(120) in order to perform an electroplating process. A positive polarity voltage is applied to the wafer. A negative polarity voltage is applied to an electrode which is arranged within the electrolyte. The electrode is formed with a main electrode and a plurality of sub-electrodes. The sub-electrodes are arranged on an upper part of the main electrode. The negative polarity voltage is applied sequentially to the main electrode and the sub-electrodes.
申请公布号 KR20040094560(A) 申请公布日期 2004.11.10
申请号 KR20030028422 申请日期 2003.05.03
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, SEON JEONG;PARK, GI CHEOL
分类号 H01L21/304;B23H3/00;B23H5/08;B23H9/00;C25F3/02;C25F7/00;H01L21/321;H01L21/768;(IPC1-7):H01L21/304 主分类号 H01L21/304
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