| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a crystalline silicon film crystallized by laser scanning is used for an element region and which prevents stripe failure on the display caused by laser scanning even when the semiconductor device is used for a liquid crystal display. <P>SOLUTION: The semiconductor device has thin film transistors which drive a plurality of pixel electrodes 106 constituted on a substrate having an insulating surface, to each thin film transistor a capacitor component is connected in series with the pixel liquid crystal capacitor. The device is constituted in such a manner that: the channel region 107 of the thin film transistor consists of a silicon film having crystallinity; one Cs electrode 108 of the capacitor component is made of a silicon film in the same layer as the channel region 107 of the thin film transistor; and the surface of the channel region in each thin film transistor and the surface of the Cs electrode 108 of the capacitor component connected to the thin film transistor are made generally identical in terms of the surface roughness. <P>COPYRIGHT: (C)2004,JPO</p> |
