发明名称 |
Metal barrier film production apparatus, metal barrier film production method, metal film production method, and metal film production apparatus |
摘要 |
A barrier metal film production apparatus, comprising: a chamber accommodating a substrate; a metallic etched member provided in the chamber at a position opposed to the substrate; source gas supply means for supplying a source gas containing a halogen into the chamber; plasma generation means which converts an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas; excitation means for exciting a gas containing nitrogen in a manner isolated from the chamber; formation means for forming a metal nitride upon reaction between nitrogen excited by the excitation means and the precursor; control means which makes a temperature of the substrate lower than a temperature of the formation means to form the metal nitride as a film on the substrate for use as a barrier metal film; oxygen gas supply means for supplying an oxygen gas into the chamber immediately before formation of the most superficial layer of the barrier metal film is completed; and oxygen plasma generation means which converts the atmosphere within the chamber into a plasma to generate an oxygen gas plasma so that an oxide layer is formed on the most superficial layer of the barrier metal film.
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申请公布号 |
EP1475455(A2) |
申请公布日期 |
2004.11.10 |
申请号 |
EP20040017494 |
申请日期 |
2002.10.28 |
申请人 |
MITSUBISHI HEAVY INDUSTRIES, LTD. |
发明人 |
SAKAMOTO, HITOSHI;YAHATA, NAOKI;MATSUDA, RYUICHI;OOBA, YOSHIYUKI;NISHIMORI, TOSHIHIKO |
分类号 |
C23C16/448;H01L21/28;C23C8/36;C23C16/34;C23C16/452;C23C16/507;C23C16/56;C23C28/00;C23C30/00;H01L21/768;(IPC1-7):C23C14/00;C23C28/02;C23C14/02;C23C14/06;C23C14/16 |
主分类号 |
C23C16/448 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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