METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO PREVENT PERMEATION OF BORON IONS

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to prevent permeation of boron ions into a source/drain of a silicon substrate by restraining the separation of the boron ions from a BPSG layer. CONSTITUTION: A gate insulating layer(13) is formed on an active region of a semiconductor substrate(10). Patterns of a gate electrode(15) are formed on a part of the gate insulating layer. A source/drain is formed between the patterns of the gate electrode. A nitride layer(21) is deposited on the entire surface of the semiconductor substrate including the patterns of the gate electrode and the source/drain. Hydrogen is removed from a surface of the nitride layer by performing a surface process. A BPSG layer(23) is formed on the nitride layer.