发明名称 METHOD FOR MANUFACTURING REDUNDANCY MODULE OF CMOS IMAGE SENSOR WITH STABILIZED PAD-OPEN PROCESSING
摘要 PURPOSE: A method for manufacturing redundancy module of a CMOS image sensor is provided to be capable of shortening process time while stabilizing pad-open processing. CONSTITUTION: An oxide layer(12) is formed on a semiconductor substrate(10) defined by a pad region with a pad and a redundancy region with a fuse(11). A metal pattern(13) is formed on the oxide layer of the redundancy region. A passivation layer(14) is formed on the resultant structure. The pad of the pad region is opened by selectively etching the passivation layer. The fuse of the redundancy region is opened by sequentially etching the metal pattern and the oxide layer using a repair mask.
申请公布号 KR20040093788(A) 申请公布日期 2004.11.09
申请号 KR20030027609 申请日期 2003.04.30
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 LEE, WON HO
分类号 H01L27/146;(IPC1-7):H01L27/146 主分类号 H01L27/146
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