发明名称 |
WIDLAR TYPE REFERENCE VOLTAGE GENERATOR OF SEMICONDUCTOR MEMORY DEVICE, ESPECIALLY MINIMIZING REFERENCE VARIATION |
摘要 |
PURPOSE: A widlar type reference voltage generator of a semiconductor memory device is provided to reduce the variation of a reference voltage according to the variation of a power supply voltage. CONSTITUTION: A widlar type first reference voltage generation unit(30) generates the first reference voltage. A differential amplification unit(31) compares the second reference voltage with the first reference voltage having a constant voltage level as to a power supply port and then generates an output voltage according to the comparison result. A driver unit(32) generates the second reference voltage in response to the output voltage. And a decoupling unit(34) is connected between an output port of the driver unit and a ground voltage port to maintain a constant voltage level of the second reference voltage without regard to power noise.
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申请公布号 |
KR20040093862(A) |
申请公布日期 |
2004.11.09 |
申请号 |
KR20030027718 |
申请日期 |
2003.04.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
SON, HUI SU |
分类号 |
G11C5/14;(IPC1-7):G11C5/14 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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