发明名称 CIRCUIT FOR GENERATING INITIALIZATION SIGNAL OF SEMICONDUCTOR MEMORY DEVICE, ESPECIALLY PREVENTING UNNECESSARY NOISE
摘要 PURPOSE: A circuit for generating an initialization signal of a semiconductor memory device is provided to perform initialization under an initial state when a command is not applied. CONSTITUTION: An inverter(20) receives a power up signal(pwrup), and an inverter(21) receives a register setting command signal(rstcmd). A NAND gate(22) receives outputs of the two inverters(20,21). An inverter(23) receives an initialization section setting signal(ckelow). An inverter(24) receives an output of the inverter(23). An NOR gate(25) receives an output of the NAND gate(22) and an output of the inverter(24). And an inverter(26) outputs an initialization signal(rstreg) by receiving an output of the NOR gate(25).
申请公布号 KR20040093804(A) 申请公布日期 2004.11.09
申请号 KR20030027638 申请日期 2003.04.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, TAEK SEUNG
分类号 G11C7/00;(IPC1-7):G11C7/00 主分类号 G11C7/00
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