| 摘要 |
PURPOSE: A method for forming a storage node of a semiconductor device is provided to improve an electrical characteristic of a storage node, by using an Ir layer and an IrO2 layer as an electrode material, by directionally dry-etching the electrode material by mixture plasma of HBr, O2 and Ar and by eliminating the polymer generated in the etch process while using an amine-containing solvent. CONSTITUTION: An interlayer dielectric(11) is formed on a semiconductor substrate. A conductor for a storage node having a stack structure composed of an Ir layer(13) and an IrO2 layer(15) is formed on the interlayer dielectric. An ARC(anti-reflective coating)(17) is formed on the conductor for the storage node. The ARC and the conductor for the storage node are etched by using a mask for the storage node wherein the conductor for the storage node is etched by using mixture gas plasma of HBr, Ar and O2. The polymer generated by the etch process is cleaned.
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