发明名称 |
TEST PATTERN FOR EVALUATING PIXEL PROPERTIES OF CMOS IMAGE SENSOR CAPABLE OF MONITORING CONTACT RESISTANCE AND MODULE THEREOF |
摘要 |
PURPOSE: A test pattern for evaluating pixel properties of a CMOS image sensor and a module thereof are provided to embody exactly process control by monitoring contact resistance in a pixel. CONSTITUTION: An active region(32) of a test pattern has the same structure to an active region of a pixel including a floating diffusion node, a power voltage node and an output node. A first, second and third contacts(34a,34b,34c) are formed at three edges of the active region. A first metal line(35) is connected to the active region via the contacts. A via is formed on the first metal line. A second metal line(36) is connected to the first metal line through the via. A test gate is embodied on the active region for measuring ON/OFF property of a transistor.
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申请公布号 |
KR20040093907(A) |
申请公布日期 |
2004.11.09 |
申请号 |
KR20030027773 |
申请日期 |
2003.04.30 |
申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
LEE, WON HO |
分类号 |
H01L21/66;H01L27/02;H01L27/146;H04N5/367;H04N5/3745;H04N17/00;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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