发明名称 TEST PATTERN FOR EVALUATING PIXEL PROPERTIES OF CMOS IMAGE SENSOR CAPABLE OF MONITORING CONTACT RESISTANCE AND MODULE THEREOF
摘要 PURPOSE: A test pattern for evaluating pixel properties of a CMOS image sensor and a module thereof are provided to embody exactly process control by monitoring contact resistance in a pixel. CONSTITUTION: An active region(32) of a test pattern has the same structure to an active region of a pixel including a floating diffusion node, a power voltage node and an output node. A first, second and third contacts(34a,34b,34c) are formed at three edges of the active region. A first metal line(35) is connected to the active region via the contacts. A via is formed on the first metal line. A second metal line(36) is connected to the first metal line through the via. A test gate is embodied on the active region for measuring ON/OFF property of a transistor.
申请公布号 KR20040093907(A) 申请公布日期 2004.11.09
申请号 KR20030027773 申请日期 2003.04.30
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 LEE, WON HO
分类号 H01L21/66;H01L27/02;H01L27/146;H04N5/367;H04N5/3745;H04N17/00;(IPC1-7):H01L21/66 主分类号 H01L21/66
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