发明名称 |
Thin-film opto-electronic device and a method of making it |
摘要 |
A thin-film opto-electronic device on a conductive silicon-containing substrate includes a sequence of layers. The layers include a layer of a porous medium preferably a porous silicon, on a substrate. The porous layer has both light diffusing and light reflecting properties. In addition, a non-porous layer is located on said porous silicon layer, with at least one first region and at least one second region being in said non-porous layer. The first region is of a first conductivity type acting as a light absorber and the second region has a conductivity of a second type, different from said first conductivity type. The sequence of layers is such that optical confinement is realised in the device.
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申请公布号 |
US6815247(B2) |
申请公布日期 |
2004.11.09 |
申请号 |
US20030644690 |
申请日期 |
2003.08.19 |
申请人 |
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC) |
发明人 |
STALMANS LIEVEN;POORTMANS JEF;CAYMAX MATTY;SAID KHALID;NIJS JOHAN |
分类号 |
H01L21/00;H01L29/06;H01L31/028;H01L31/052;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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地址 |
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